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13007T Bipolar Junction Transistor

13007T Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.13007T Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1.APPLICATION Fluorescen.

13007T Features

* High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Vo

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Datasheet Details

Part number
13007T
Manufacturer
Jingdao
File Size
113.15 KB
Datasheet
13007T-Jingdao.pdf
Description
Bipolar Junction Transistor

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