13007T - Bipolar Junction Transistor

Datasheet Summary

Features

High voltage capability Features of good high temperature High switching speed 3．.

Jingdao

📥 Download Datasheet

Datasheet Details

Part number	13007T
Manufacturer	Jingdao
File Size	113.15 KB
Description	Bipolar Junction Transistor
Datasheet	13007T Datasheet
Additional preview pages of the 13007T datasheet.

📁 Similar Datasheet

13007 - NPN Silicon Transistor (Trea Sure Star)
13007 - NPN Transistor (Micro Electronics)
13007 - NPN Transistor (Jiangsu Changjiang)
13007 - NPN Epitaxial Silicon Transistor (Elite)
13007A - MJE13007A (Mospec Semiconductor)
13007B - TS13007B (TSC)
13007N - ST13007N (STMicroelectronics)
1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
1300-102-4xx - 2.54mm IDC Connector (Methode Electronics)
13001 - NPN Epitaxial Silicon Transistor (Elite)

Other Datasheets by Jingdao

13007DL - Bipolar Junction Transistor
13007S - Bipolar Junction Transistor
13001-2 - NPN power transistor
13001-A - NPN power transistor
13003AD - Bipolar Junction Transistor
13005D - NPN power transistor
13005DL - NPN power transistor
13009 - PNP power transistor

Full PDF Text Transcription

Click to expand full text

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.

Published: Mar 18, 2020 |