Datasheet4U Logo Datasheet4U.com

13007N - ST13007N

Datasheet Summary

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance switching speeds.

📥 Download Datasheet

Datasheet preview – 13007N

Datasheet Details

Part number 13007N
Manufacturer STMicroelectronics
File Size 94.52 KB
Description ST13007N
Datasheet download datasheet 13007N Datasheet
Additional preview pages of the 13007N datasheet.

📁 Similar Datasheet

  • 13007 - NPN Silicon Transistor (Trea Sure Star)
  • 13007 - NPN Transistor (Micro Electronics)
  • 13007 - NPN Transistor (Jiangsu Changjiang)
  • 13007 - NPN Epitaxial Silicon Transistor (Elite)
  • 13007A - MJE13007A (Mospec Semiconductor)
  • 13007B - TS13007B (TSC)
  • 13007DL - Bipolar Junction Transistor (Jingdao)
  • 13007S - Bipolar Junction Transistor (Jingdao)
  • 13007T - Bipolar Junction Transistor (Jingdao)
  • 1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
Other Datasheets by STMicroelectronics
  • 13003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • 13005A - High voltage fast-switching NPN power transistor
  • 13005C - High voltage fast-switching NPN power transistor
  • 13005D - High voltage fast-switching NPN power transistor
  • 13005E - High voltage fast-switching NPN power transistor
  • 13005F - High voltage fast-switching NPN power transistor
  • 13009 - NPN power transistor
  • 13009H - NPN power transistor

Full PDF Text Transcription

Click to expand full text
® ST13007N ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.
Published: |