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KHB7D0N65P1

High Voltage MOSFETs

KHB7D0N65P1 Features

* VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.

KHB7D0N65P1 General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSI.

KHB7D0N65P1 Datasheet (104.27 KB)

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Datasheet Details

Part number:

KHB7D0N65P1

Manufacturer:

KEC semiconductor

File Size:

104.27 KB

Description:

High voltage mosfets.

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KHB7D0N65P1 High Voltage MOSFETs KEC semiconductor

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