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KHB7D5N60P1

High Voltage MOSFETs

KHB7D5N60P1 Features

* VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1

KHB7D5N60P1 General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB011N40P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C.

KHB7D5N60P1 Datasheet (105.48 KB)

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Datasheet Details

Part number:

KHB7D5N60P1

Manufacturer:

KEC semiconductor

File Size:

105.48 KB

Description:

High voltage mosfets.

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KHB7D5N60P1 High Voltage MOSFETs KEC semiconductor

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