KHB011N40F2 Datasheet - KEC

KHB011N40F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

A KHB011N40P1 O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power s.

KHB011N40F2 Features

* VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2

KHB011N40F2_KEC.pdf

KHB011N40F2 Datasheet Preview — Preview of KHB011N40F2 PDF

Datasheet Details

Part number:

KHB011N40F2

Manufacturer:

KEC

File Size:

527.25 KB

Description:

N channel mos field effect transistor.

KHB011N40F2 Distributor

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KHB011N40F2 CHANNEL MOS FIELD EFFECT TRANSISTOR KEC