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KHB2D0N60F1

(KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

KHB2D0N60F1 Features

* VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Ene

KHB2D0N60F1 General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D .

KHB2D0N60F1 Datasheet (106.18 KB)

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Datasheet Details

Part number:

KHB2D0N60F1

Manufacturer:

KEC semiconductor

File Size:

106.18 KB

Description:

(khb2d0n60f1/p1) n-channel mos field effect transistor.

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