KHB2D0N60F1 (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

KEC semiconductor

Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KHB2D0N60F1
Manufacturer: KEC semiconductor
File Size: 106.18 KB
Datasheet: KHB2D0N60F1_KECsemiconductor.pdf
Description: (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

Features

* VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ. ) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Ene

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KHB2D0N60F1 KHB2D0N60F1 N-Channel MOS Field Effect Transistor KEC semiconductor

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