KHB2D0N60P Datasheet, Transistor, KEC semiconductor

KHB2D0N60P Features

• Transistor VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1

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Part number:

KHB2D0N60P

Manufacturer:

KEC semiconductor

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103.36kb

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📄 Datasheet

Description:

(khb2d0n60f/p) n-channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent a

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KHB2D0N60P

KEC semiconductor

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