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KHB2D0N60F (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor

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Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number
KHB2D0N60F
Manufacturer
KEC semiconductor
File Size
103.36 KB
Datasheet
KHB2D0N60F_KECsemiconductor.pdf
Description
(KHB2D0N60F/P) N-Channel MOS Field Effect Transistor

Features

* VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ. ) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M

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