KHB2D0N60F1_KECsemiconductor.pdf
Datasheet Details
Part number:
KHB2D0N60P1, KHB2D0N60F1
Manufacturer:
KEC semiconductor
File Size:
106.18 KB
Description:
(khb2d0n60f1/p1) n-channel mos field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: KHB2D0N60P1, KHB2D0N60F1.
Please refer to the document for exact specifications by model.
KHB2D0N60P1, KHB2D0N60F1, (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D
KHB2D0N60P1 Features
* VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Ene
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