KHB7D5N60F1

High Voltage MOSFETs

KEC semiconductor

KHB7D5N60F1 Features

* VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1

KHB7D5N60F1 General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB011N40P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C.

KHB7D5N60F1 Datasheet (105.48 KB)

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KHB7D5N60F1

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KEC semiconductor

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High voltage mosfets.

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KHB7D5N60F1 High Voltage MOSFETs KEC semiconductor

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KHB7D5N60F1 Features

KHB7D5N60F1 General Description

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