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2N2906E

EPITAXIAL PLANAR PNP TRANSISTOR

2N2906E Features

* Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B

2N2906E Datasheet (49.65 KB)

Preview of 2N2906E PDF

Datasheet Details

Part number:

2N2906E

Manufacturer:

KEC

File Size:

49.65 KB

Description:

Epitaxial planar pnp transistor.

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2N2906E EPITAXIAL PLANAR PNP TRANSISTOR KEC

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