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2N2906E - EPITAXIAL PLANAR PNP TRANSISTOR

2N2906E Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.SWITCHING APPLICATION..

2N2906E Features

* Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B

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Datasheet Details

Part number
2N2906E
Manufacturer
KEC
File Size
49.65 KB
Datasheet
2N2906E-KEC.pdf
Description
EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC 2N2906E-like datasheet