2N2906E Datasheet - KEC

2N2906E, EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.SWITCHING APPLICATION..

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2N2906E-KEC.pdf

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Datasheet Details

Part number:

2N2906E

Manufacturer:

KEC

File Size:

49.65 KB

Description:

EPITAXIAL PLANAR PNP TRANSISTOR

Features

* Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B

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