Datasheet Details
- Part number
- 2N2906E
- Manufacturer
- KEC
- File Size
- 49.65 KB
- Datasheet
- 2N2906E-KEC.pdf
- Description
- EPITAXIAL PLANAR PNP TRANSISTOR
2N2906E Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.SWITCHING APPLICATION..
2N2906E Features
* Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V. MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-B
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