KF3N80D N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KF3N80D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

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Datasheet Specifications

Part number: KF3N80D
Manufacturer: KEC
File Size: 385.71 KB
Datasheet: KF3N80D-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti

KF3N80D Distributors

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KF3N80D N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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