KF3N80F Datasheet, Transistor, KEC

KF3N80F Features

  • Transistor VDSS=800V, ID=3A Drain-Source ON Resistance : RDS(ON)(Max)=4.2 @VGS=10V Qg(typ.)=12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VG

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Part number:

KF3N80F

Manufacturer:

KEC

File Size:

381.79kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

Datasheet Preview: KF3N80F 📥 Download PDF (381.79kb)
Page 2 of KF3N80F Page 3 of KF3N80F

TAGS

KF3N80F
CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
KEC

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