Part number:
KF3N80F
Manufacturer:
KEC
File Size:
381.79 KB
Description:
N channel mos field effect transistor.
* VDSS=800V, ID=3A Drain-Source ON Resistance : RDS(ON)(Max)=4.2 @VGS=10V Qg(typ.)=12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy
KF3N80F
KEC
381.79 KB
N channel mos field effect transistor.
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