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KF3N80F N-Channel MOSFET

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Description

SEMICONDUCTOR TECHNICAL DATA KF3N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

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Datasheet Specifications

Part number
KF3N80F
Manufacturer
KEC
File Size
381.79 KB
Datasheet
KF3N80F-KEC.pdf
Description
N-Channel MOSFET

Features

* VDSS=800V, ID=3A Drain-Source ON Resistance : RDS(ON)(Max)=4.2 @VGS=10V Qg(typ. )=12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy

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