Part number:
KF3N80I
Manufacturer:
KEC
File Size:
385.71 KB
Description:
N-channel mos field effect transistor.
* VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti
KF3N80I
KEC
385.71 KB
N-channel mos field effect transistor.
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