KF3N80I Features
* VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti
Datasheet Details
KF3N80I, KF3N80D
KEC
385.71 KB
N-channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KF3N80I, KF3N80D.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
