KF3N80I Datasheet, Transistor, KEC

KF3N80I Features

• Transistor VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltag

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Part number:

KF3N80I

Manufacturer:

KEC

File Size:

385.71kb

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📄 Datasheet

Description:

N-channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

TAGS

KF3N80I

KEC

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