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KF3N80I, KF3N80D Datasheet - KEC

KF3N80I N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N80I Features

* VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti

KF3N80D-KEC.pdf

This datasheet PDF includes multiple part numbers: KF3N80I, KF3N80D. Please refer to the document for exact specifications by model.
KF3N80I Datasheet Preview Page 2 KF3N80I Datasheet Preview Page 3

Datasheet Details

Part number:

KF3N80I, KF3N80D

Manufacturer:

KEC

File Size:

385.71 KB

Description:

N-channel mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: KF3N80I, KF3N80D.
Please refer to the document for exact specifications by model.

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TAGS

KF3N80I KF3N80D N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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