KF4N20LI Features
* VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V H G F F KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF4N20LD A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2
Datasheet Details
KF4N20LI, KF4N20LD
KEC
0.98 MB
N-channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KF4N20LI, KF4N20LD.
Please refer to the document for exact specifications by model.
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