KF4N20LW Datasheet - KEC

KF4N20LW, N-CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

Features

* VDSS(Min. )= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 Qg(typ. ) =2.9nC Vth(Max. )= 2V (max) @VGS =10V KF4N20LW N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed

KF4N20LW-KEC.pdf