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KF4N20LW - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF4N20LW Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

KF4N20LW Features

* VDSS(Min. )= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 Qg(typ. ) =2.9nC Vth(Max. )= 2V (max) @VGS =10V KF4N20LW N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed

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Datasheet Details

Part number
KF4N20LW
Manufacturer
KEC
File Size
311.76 KB
Datasheet
KF4N20LW-KEC.pdf
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
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