KF4N20LW N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KF4N20LW
Manufacturer: KEC
File Size: 311.76 KB
Datasheet: KF4N20LW-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 Qg(typ. ) =2.9nC Vth(Max. )= 2V (max) @VGS =10V KF4N20LW N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed

KF4N20LW Distributors

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KF4N20LW N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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