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KMB2D0N60SA - Trench MOSFET

KMB2D0N60SA Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB2D0N60SA N-Ch Trench MOSFET General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMB2D0N60SA Features

* A H 2 G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max. ) @ VGS=10V RDS(ON)=220m (Max. ) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00

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Datasheet Details

Part number
KMB2D0N60SA
Manufacturer
KEC
File Size
498.08 KB
Datasheet
KMB2D0N60SA_KEC.pdf
Description
Trench MOSFET

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Trench MOSFET KEC
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