KMB4D5DN60QA Dual N-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

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Datasheet Specifications

Part number: KMB4D5DN60QA
Manufacturer: KEC
File Size: 49.96 KB
Datasheet: KMB4D5DN60QA-KEC.pdf
Description: Dual N-Channel MOSFET

Features

* VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max. ) @ VGS=10V RDS(ON)=77m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward

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📁 Related Datasheet

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KMB4D5DN60QA Dual N-Channel MOSFET KEC

KEC KMB4D5DN60QA-like datasheet