KMB4D0N30SA Trench MOSFET

KEC

Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB4D0N30SA N-Ch Trench MOSFET General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KMB4D0N30SA
Manufacturer: KEC
File Size: 499.63 KB
Datasheet: KMB4D0N30SA_KEC.pdf
Description: Trench MOSFET

Features

* A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max. ) @ VGS=10V RDS(ON)=65m (Max. ) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~

KMB4D0N30SA Distributors

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KMB4D0N30SA Trench MOSFET KEC

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