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KMB6D0DN30QA Trench MOSFET

KMB6D0DN30QA Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB6D0DN30QA Dual N-Ch Trench MOSFET GENERAL .
This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

KMB6D0DN30QA Features

* VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max. ) @VGS=10V (Max. ) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2

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Datasheet Details

Part number
KMB6D0DN30QA
Manufacturer
KEC
File Size
492.99 KB
Datasheet
KMB6D0DN30QA_KEC.pdf
Description
Trench MOSFET

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Trench MOSFET KEC
KEC KMB6D0DN30QA-like datasheet