Part number:
KMB6D0DN30QB
Manufacturer:
KEC
File Size:
372.37 KB
Description:
Dual n-channel mosfet.
KMB6D0DN30QB Datasheet (372.37 KB)
* VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Volt
KMB6D0DN30QB Datasheet (372.37 KB)
KMB6D0DN30QB
KEC
372.37 KB
Dual n-channel mosfet.
📁 Related Datasheet
KMB6D0DN30QA Trench MOSFET (KEC)
KMB6D0DN35QB Dual N-Channel MOSFET (KEC)
KMB010P30QA P-Channel Trench MOSFET (KEC)
KMB012N30QA N-Channel Trench MOSFET (KEC)
KMB014P30QA Trench MOSFET (KEC)
KMB030N30D N-Channel Trench MOSFET (KEC)
KMB035N40DB N-Channel Trench MOSFET (KEC)
KMB035N40DC N-Channel Trench MOSFET (KEC)
KMB050N60P N-Channel MOSFET (KEC)
KMB050N60PA N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
