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KMB6D0DN30QB Dual N-Channel MOSFET

KMB6D0DN30QB Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMB6D0DN30QB Features

* VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Volt

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Datasheet Details

Part number
KMB6D0DN30QB
Manufacturer
KEC
File Size
372.37 KB
Datasheet
KMB6D0DN30QB-KEC.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET KEC
KEC KMB6D0DN30QB-like datasheet