KMB6D0DN30QB Dual N-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KMB6D0DN30QB
Manufacturer: KEC
File Size: 372.37 KB
Datasheet: KMB6D0DN30QB-KEC.pdf
Description: Dual N-Channel MOSFET

Features

* VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Volt

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KMB6D0DN30QB Dual N-Channel MOSFET KEC

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