Datasheet4U Logo Datasheet4U.com

KMB6D0DN35QB

Dual N-Channel MOSFET

KMB6D0DN35QB Features

* VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage Gate Sourc

KMB6D0DN35QB Datasheet (894.56 KB)

Preview of KMB6D0DN35QB PDF

Datasheet Details

Part number:

KMB6D0DN35QB

Manufacturer:

KEC

File Size:

894.56 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

KMB6D0DN30QA Trench MOSFET (KEC)

KMB6D0DN30QB Dual N-Channel MOSFET (KEC)

KMB010P30QA P-Channel Trench MOSFET (KEC)

KMB012N30QA N-Channel Trench MOSFET (KEC)

KMB014P30QA Trench MOSFET (KEC)

KMB030N30D N-Channel Trench MOSFET (KEC)

KMB035N40DB N-Channel Trench MOSFET (KEC)

KMB035N40DC N-Channel Trench MOSFET (KEC)

KMB050N60P N-Channel MOSFET (KEC)

KMB050N60PA N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)

TAGS

KMB6D0DN35QB Dual N-Channel MOSFET KEC

Image Gallery

KMB6D0DN35QB Datasheet Preview Page 2 KMB6D0DN35QB Datasheet Preview Page 3

KMB6D0DN35QB Distributor