KML0D4N20E - N-Channel MOSFET
KML0D4N20E Features
* VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25
