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KML0D4N20E - N-Channel MOSFET

KML0D4N20E Description

SEMICONDUCTOR TECHNICAL DATA General .
It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter.

KML0D4N20E Features

* VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25

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Datasheet Details

Part number
KML0D4N20E
Manufacturer
KEC
File Size
771.20 KB
Datasheet
KML0D4N20E-KEC.pdf
Description
N-Channel MOSFET

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