KML0D4P20E - P-Channel MOSFET
KML0D4P20E Features
* VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V : RDS(ON)=1.6 @ VGS= -2.5V : RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. KML0D4P20E P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGS