KML0D4N20V - N-Channel MOSFET
KML0D4N20V Features
* VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design KML0D4N20V N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch Drain-Source Voltage Gate-Source Voltage Drain Current DC @T
