KTD2499 Datasheet, Transistor, KEC

KTD2499 Features

  • Transistor High Voltage : VCBO 1500V. Low Saturation Voltage :VCE(sat)=5V(Max.) (IC=4A, IB=0.8A). High Speed : tf=0.3 S(Typ.) Built-in Damper Diode. Collector Metal (Fin) is Fully Covered with Mol

PDF File Details

Part number:

KTD2499

Manufacturer:

KEC

File Size:

297.91kb

Download:

📄 Datasheet

Description:

Triple diffused npn transistor.

Datasheet Preview: KTD2499 📥 Download PDF (297.91kb)
Page 2 of KTD2499

TAGS

KTD2499
Triple
Diffused
NPN
Transistor
KEC

📁 Related Datasheet

KTD2424 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA KTD2424 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000.

KTD2058 - NPN Transistor (SeCoS)
Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free F.

KTD2058 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC=.

KTD2058 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.

KTD2059 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC=.

KTD2059 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA KTD2059 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ᴌComplementary to KTB1367. MAXIMUM RATING.

KTD2060 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
KTD2060 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features hFE , KTB1368 .

KTD2060 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= .

KTD2060 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KT.

KTD2061 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : VC.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts