Part number:
2SB1266
Manufacturer:
KEXIN
File Size:
700.87 KB
Description:
Pnp transistors.
* Suitable for sets whose height is restricted
* Complementary to 2SD1902 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax +5.55 0.15 -0.15 3.80 Unit: mm + 0.252 .6 5 -0.1 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 +9.70 0.2 -0
2SB1266
KEXIN
700.87 KB
Pnp transistors.
📁 Related Datasheet
2SB1260 - Power Transistor
(Rohm)
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suit.
2SB1260 - Power Transistor
(GME)
Power Transistor(-80V,-1A)
FEATURES
z High breakdown voltage and high current. BVCEO=-80V,IC=-1A
z Good hFEVLinearity. z Low VCE(sat). z Complements .
2SB1260 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complem.
2SB1260 - Plastic-Encapsulate Transistors
(WILLAS)
WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M+ 2SB1260 THRU
FM1200.
2SB1260 - PNP Transistor
(JinYu)
2SB1 260
TRANSISTOR(PNP)
SOT-89-3L
FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements .
2SB1260 - PNP Transistors
(Kexin)
SMD Type
Power Transistor 2SB1260
Features
High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial p.
2SB1260 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1260 TRANSISTOR (PNP)
FEATURES z Power Transistor z H.
2SB1260 - PNP Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SB1260
-1 A, -80 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
