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SJMN11A60D N-Channel Super Junction MOSFET

SJMN11A60D Description

SJMN11A60D Super Junction MOSFET N-Channel Super Junction MOSFET .

SJMN11A60D Features

* Drain-Source voltage: VDS=650V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.3Ω (Typ. )
* Ultra low gate charge: Qg=23nC (Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A60D SJMN11A60 TO-252 D G S

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Datasheet Details

Part number
SJMN11A60D
Manufacturer
KODENSHI KOREA
File Size
321.43 KB
Datasheet
SJMN11A60D-AUK.pdf
Description
N-Channel Super Junction MOSFET

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N-Channel Super Junction MOSFET KODENSHI KOREA
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