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SJMN11A60D

N-Channel Super Junction MOSFET

SJMN11A60D Features

* Drain-Source voltage: VDS=650V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.3Ω (Typ.)

* Ultra low gate charge: Qg=23nC (Typ.)

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A60D SJMN11A60 TO-252 D G S

SJMN11A60D Datasheet (321.43 KB)

Preview of SJMN11A60D PDF

Datasheet Details

Part number:

SJMN11A60D

Manufacturer:

KODENSHI KOREA

File Size:

321.43 KB

Description:

N-channel super junction mosfet.

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TAGS

SJMN11A60D N-Channel Super Junction MOSFET KODENSHI KOREA

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