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SJMN11A70I

N-Channel Super Junction MOSFET

SJMN11A70I Features

* Drain-Source voltage: VDS=750V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.33 (Typ.)

* Ultra low gate charge: Qg=23nC (Typ.)

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A70I SJMN11A70 I-PAK GDS I-P

SJMN11A70I Datasheet (329.71 KB)

Preview of SJMN11A70I PDF

Datasheet Details

Part number:

SJMN11A70I

Manufacturer:

KODENSHI KOREA

File Size:

329.71 KB

Description:

N-channel super junction mosfet.

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TAGS

SJMN11A70I N-Channel Super Junction MOSFET KODENSHI KOREA

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