SJMN11A70I - N-Channel Super Junction MOSFET

KODENSHI KOREA

Datasheet Details

Part number	SJMN11A70I
Manufacturer	KODENSHI KOREA
File Size	329.71 KB
Description	N-Channel Super Junction MOSFET
Datasheet	SJMN11A70I-AUK.pdf

Drain-Source voltage: VDS=750V (@TJ=150C).
Low drain-source On resistance: RDS(on)=0.33 (Typ. ).
Ultra low gate charge: Qg=23nC (Typ. ).
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package SJMN11A70I SJMN11A70 I-PAK GDS I-PAK Marking Information SJMN 11A70 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted.

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Published: Feb 7, 2019 |