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SJMN11A70I N-Channel Super Junction MOSFET

SJMN11A70I Description

SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET .

SJMN11A70I Features

* Drain-Source voltage: VDS=750V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.33 (Typ. )
* Ultra low gate charge: Qg=23nC (Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A70I SJMN11A70 I-PAK GDS I-P

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Datasheet Details

Part number
SJMN11A70I
Manufacturer
KODENSHI KOREA
File Size
329.71 KB
Datasheet
SJMN11A70I-AUK.pdf
Description
N-Channel Super Junction MOSFET

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N-Channel Super Junction MOSFET KODENSHI KOREA
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