SJMN190R65F Datasheet - KODENSHI KOREA

SJMN190R65F, N-Channel Super Junction MOSFET

SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET .

Features

* Drain-Source voltage: VDS=700V (@TJ=150°C)
* Low drain-source On resistance: RDS(on)=0.19Ω (Max. )
* Ultra low gate charge: Qg=20nC(Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65F N190R6

SJMN190R65F-AUK.pdf