SJMN190R65B - N-Channel Super Junction MOSFET

KODENSHI KOREA

Datasheet Details

Part number	SJMN190R65B
Manufacturer	KODENSHI KOREA
File Size	579.30 KB
Description	N-Channel Super Junction MOSFET
Datasheet	SJMN190R65B-AUK.pdf

Drain-Source voltage: VDS=700V (@TJ=150C).
Low drain-source On resistance: RDS(on)=0.19Ω (Max. ).
Ultra low gate charge: Qg=20nC(Typ. ).
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-263 (D2-PAK) Marking Information SJMN 190R65 YWWZ Column 1: Manufacturer Column 2: Production Information e. g. ) YWWN -. YWW: Data Code (year, week) -. Z: Management Code Absolute maximum ratings (T.

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Published: Feb 7, 2019 |