SJMN190R65B Datasheet, Mosfet, KODENSHI KOREA

SJMN190R65B Features

• Mosfet
• Drain-Source voltage: VDS=700V (@TJ=150C)
• Low drain-source On resistance: RDS(on)=0.19Ω (Max.)
• Ultra low gate charge: Qg=20nC(Typ.)
• RoHS complia

PDF File Details

Part number:

SJMN190R65B

Manufacturer:

KODENSHI KOREA

File Size:

579.30kb

Download:

📄 Datasheet

Description:

N-channel super junction mosfet.

TAGS

SJMN190R65B

KODENSHI KOREA

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