SJMN190R65B

N-Channel Super Junction MOSFET

KODENSHI KOREA

* Drain-Source voltage: VDS=700V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.19Ω (Max.)

* Ultra low gate charge: Qg=20nC(Typ.)

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-2

SJMN190R65B

KODENSHI KOREA

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N-channel super junction mosfet.

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SJMN190R65B N-Channel Super Junction MOSFET KODENSHI KOREA

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