SJMN190R65B Datasheet - KODENSHI KOREA

SJMN190R65B, N-Channel Super Junction MOSFET

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET .

Features

* Drain-Source voltage: VDS=700V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.19Ω (Max. )
* Ultra low gate charge: Qg=20nC(Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-2

SJMN190R65B-AUK.pdf