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SJMN190R65B N-Channel Super Junction MOSFET

SJMN190R65B Description

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET .

SJMN190R65B Features

* Drain-Source voltage: VDS=700V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.19Ω (Max. )
* Ultra low gate charge: Qg=20nC(Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-2

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Datasheet Details

Part number
SJMN190R65B
Manufacturer
KODENSHI KOREA
File Size
579.30 KB
Datasheet
SJMN190R65B-AUK.pdf
Description
N-Channel Super Junction MOSFET

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N-Channel Super Junction MOSFET KODENSHI KOREA
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