SJMN11S60I - N-Channel Super Junction MOSFET

KODENSHI KOREA

Datasheet Details

Part number	SJMN11S60I
Manufacturer	KODENSHI KOREA
File Size	538.72 KB
Description	N-Channel Super Junction MOSFET
Datasheet	SJMN11S60I-AUK.pdf

Drain-Source voltage: VDS=650V (@TJ=150C).
Low drain-source On resistance: RDS(on)=0.34Ω (Typ. ).
Low input capacitance and gate charge.
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-PAK Marking Information SJMN 11S60 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted.

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Published: Feb 7, 2019 |