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SJMN11S60I N-Channel Super Junction MOSFET

SJMN11S60I Description

SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET .

SJMN11S60I Features

* Drain-Source voltage: VDS=650V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.34Ω (Typ. )
* Low input capacitance and gate charge
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-P

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Datasheet Details

Part number
SJMN11S60I
Manufacturer
KODENSHI KOREA
File Size
538.72 KB
Datasheet
SJMN11S60I-AUK.pdf
Description
N-Channel Super Junction MOSFET

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N-Channel Super Junction MOSFET KODENSHI KOREA
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