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SJMN11S60I Datasheet - KODENSHI KOREA

SJMN11S60I, N-Channel Super Junction MOSFET

SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET .

Features

* Drain-Source voltage: VDS=650V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.34Ω (Typ. )
* Low input capacitance and gate charge
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-P

SJMN11S60I-AUK.pdf

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Datasheet Details

Part number:

SJMN11S60I

Manufacturer:

KODENSHI KOREA

File Size:

538.72 KB

Description:

N-Channel Super Junction MOSFET

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