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SJMN11S60I

N-Channel Super Junction MOSFET

SJMN11S60I Features

* Drain-Source voltage: VDS=650V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)

* Low input capacitance and gate charge

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-P

SJMN11S60I Datasheet (538.72 KB)

Preview of SJMN11S60I PDF

Datasheet Details

Part number:

SJMN11S60I

Manufacturer:

KODENSHI KOREA

File Size:

538.72 KB

Description:

N-channel super junction mosfet.

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TAGS

SJMN11S60I N-Channel Super Junction MOSFET KODENSHI KOREA

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