SJMN190R65F Datasheet, Rectifier, KODENSHI KOREA

SJMN190R65F Features

• Rectifier
• Low forward drop voltage
• Dual common cathode rectifier construction
• Ultrafast recovery time and high speed switching
• Full lead (Pb)-free device a

PDF File Details

Part number:

SJMN190R65F

Manufacturer:

KODENSHI KOREA

File Size:

174.34kb

Download:

📄 Datasheet

Description:

Ultrafast recovery power rectifier. The SFN10A300C is ideally as boost diode in discontinuous or critical mode power factor corrections. The planar structure and the pla

SJMN190R65F Application

• Applications
• Switching power supply
• Power inverters
• Power conversion system 123 123 Pin 1, 3 : Anode Pin 2: Cathode

TAGS

SJMN190R65F

KODENSHI KOREA

📁 Related Datasheet

SJMN190R65B - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resist.

SJMN190R65F - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features • Drain-Source voltage: VDS=700V (@TJ=150°C) • Low drain-source On resist.

SJMN11A60D - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN11A60D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resista.

SJMN11A70I - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resista.

SJMN11S60I - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source .

SJMN04A65D - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN04A65D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resista.

SJMN05A70D - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN05A70D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resista.

SJMN05A70I - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN05A70I Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resista.

SJMN05S60FD - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resist.

SJMN065R65W - N-Channel Super Junction MOSFET (KODENSHI KOREA)
SJMN0 6 5 R6 5 W N-Channel Super-j unction MOSFET SWITCHING REGULATOR APPLICATION Fe at ur e s • 650V Super-j unct ion MOSFET • Low FOM RDS(on) * Qg.