Datasheet4U Logo Datasheet4U.com

2SB806 Transistor

2SB806 Description

SMD Type PNP Silicon Epitaxial Transistor 2SB806 Transistors .

2SB806 Features

* High collector to emitter voltage: VCEO -120V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse)
* 1 Collector power dissipation Junction temperature Storage temperature
* 1. PW 10ms,dut

📥 Download Datasheet

Preview of 2SB806 PDF

Datasheet Details

Part number
2SB806
Manufacturer
Kexin
File Size
69.46 KB
Datasheet
2SB806_Kexin.pdf
Description
Transistor

📁 Related Datasheet

  • 2SB800 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB804 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB805 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB808 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB810 - PNP SILICON TRANSISTOR (NEC)
  • 2SB812 - PNP Transistor (INCHANGE)
  • 2SB813 - PNP Transistor (INCHANGE)
  • 2SB815 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

Transistor Kexin
Kexin 2SB806-like datasheet