APTK2012MGC
Kingbright Corporation
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Smd chip led lamp. The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Package Dimensions www.DataShe
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APTK2012MGCK - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0X1.25mm SMD CHIP LED LAMP
APTK2012MGCK MEGA GREEN
Features
2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. LOW
Description
The Mega Green source color .
APTK2012MBC - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0X1.25mm SMD CHIP LED LAMP
APTK2012MBC BLUE
Features
2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. LOW
Description
The Blue source color devices are m.
APTK2012CGCK-F01 - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC
Part Number: APTK2012CGCK-F01 Green
Features
z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. z LOW POWER CONS.
APTK2012SEC - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0X1.25mm SMD CHIP LED LAMP
APTK2012SEC SUPER BRIGHT ORANGE
Features
2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. LOW
Description
The Super Bright Ora.
APTK2012SURC - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0x1.25mm SMD CHIP LED LAMP
Part Number: APTK2012SURC
HYPER RED
Features
z2.0mmx1.25mm zLOW
Description
SMT LED, 0.75mm THICKNESS. The Hyper Red .
APTK2012SYC - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0x1.25mm SMD CHIP LED LAMP
APTK2012SYC
SUPER BRIGHT YELLOW
Features
2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING A.
APTK2012TGC - SMD CHIP LED LAMP
(Kingbright Corporation)
2.0X1.25mm SMD CHIP LED LAMP
APTK2012TGC GREEN
Features
2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. LOW
Description
The Green source color devices are.
APT05DC120HJ - SiC Diode Full Bridge Power Module
(Microsemi)
APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Ind.
APT06DC60HJ - SiC Diode Full Bridge Power Module
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APT06DC60HJ
ISOTOP® SiC Diode Full Bridge Power Module
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Application • • • • Switch mode power supplies rectifier Induc.
APT1001R1AVR - MOSFET
(Advanced Power Technology)
APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.