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KRC286M, KRC281M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

KRC286M Description

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.AUDIO MUTING APPLICATION..

KRC286M Features

* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANS

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This datasheet PDF includes multiple part numbers: KRC286M, KRC281M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KRC286M, KRC281M
Manufacturer
Korea Electronics
File Size
380.84 KB
Datasheet
KRC281M_KoreaElectronics.pdf
Description
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: KRC286M, KRC281M.
Please refer to the document for exact specifications by model.

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📌 All Tags

KRC281M KRC286M EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics
Korea Electronics KRC286M-like datasheet