S-LBSS138DW1T1G - Power MOSFET
(LRC)
LBSS138DW1T1G
S-LBSS138DW1T1G
Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88
1. FEATURES
● We declare that the material of product pliance with .
S-LBSS138V3.3T1G - Dual Integrated Circuit N-Channel/PN Duals
(LRC)
LESHAN RADIO COMPANY, LTD.
Dual Integrated Circuit
N-Channel/PN Duals
• We declare that the material of product pliance with RoHS requirements. .
S-LBSS139LT1G - Power MOSFET
(LRC)
.
S-LBSS4240LT1G - General Purpose Transistors
(LRC)
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
40V,2A Low VCE(sat) NPN Silicon
FEATURES • Low collector-emitter saturation voltage
• High cu.
S-LBAS16LT1G - Switching Diode
(LRC)
LBAS16LT1G
S-LBAS16LT1G
Switching Diode
1. FEATURES
● We declare that the material of product pliance with RoHS requirements and Halogen Free.
● S.
S-LBAS16WT1G - Switching Diode
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product pliance with RoHS requirements.
z S- Prefix.
S-LBAS20HT1G - High Voltage Switching Diode
(LRC)
LBAS20HT1G S-LBAS20HT1G
High Voltage Switching Diode
1. FEATURES
● We declare that the material of product pliance with RoHS requirements and Halog.
S-LBAS316T1G - High speed diode
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
High-speed diode
DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in
planar technology, and encapsulat.
S-LBAS40BST5G - SCHOTTKY BARRIER DIODE
(LRC)
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive a.
S-LBAS516T1G - High-speed Diode
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
High-speed Diode
DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology
and encapsulate.
