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3DG536KM, 3DG536M SILICON NPN TRANSISTOR

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Description

2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications./Absolute Maximum.

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This datasheet PDF includes multiple part numbers: 3DG536KM, 3DG536M. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
3DG536KM, 3DG536M
Manufacturer
LZG
File Size
214.45 KB
Datasheet
3DG536M-LZG.pdf
Description
SILICON NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: 3DG536KM, 3DG536M.
Please refer to the document for exact specifications by model.

Applications

* /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit

3DG536KM Distributors

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