3DG536KM, 3DG536M Datasheet - LZG

3DG536KM SILICON NPN TRANSISTOR

2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit ICBO VCB=35V IE=0 1.0 μA IEBO VEB=4.0V IC=0 1.0 μA hFE VCE=6.0.

3DG536M-LZG.pdf

3DG536KM Datasheet Preview — This datasheet PDF includes multiple part numbers: 3DG536KM, 3DG536M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

3DG536KM, 3DG536M

Manufacturer:

LZG

File Size:

214.45 KB

Description:

Silicon npn transistor.

Note:

This datasheet PDF includes multiple part numbers: 3DG536KM, 3DG536M.
Please refer to the document for exact specifications by model.

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3DG536KM 3DG536M SILICON NPN TRANSISTOR LZG

3DG536KM Distributor