Datasheet Specifications
- Part number
- CG2H40025
- Manufacturer
- MACOM
- File Size
- 1.24 MB
- Datasheet
- CG2H40025-MACOM.pdf
- Description
- RF Power GaN HEMT
Description
CG2H40025 25 W, 28 V RF Power GaN HEMT .Features
* Up to 6 GHz OperationApplications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solderdown, pill package. PNs: CG2H40025P and CG2H40025F Package Types: 440196 and 440CG2H40025 Distributors
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