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CG2H40025 RF Power GaN HEMT

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Description

CG2H40025 25 W, 28 V RF Power GaN HEMT .
The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number
CG2H40025
Manufacturer
MACOM
File Size
1.24 MB
Datasheet
CG2H40025-MACOM.pdf
Description
RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 17 dB Small Signal Gain at 2.0 GHz
* 15 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 70% Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solderdown, pill package. PNs: CG2H40025P and CG2H40025F Package Types: 440196 and 440

CG2H40025 Distributors

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Power GaN HEMT MACOM
MACOM CG2H40025-like datasheet