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CG2H40025

RF Power GaN HEMT

CG2H40025 Features

* Up to 6 GHz Operation

* 17 dB Small Signal Gain at 2.0 GHz

* 15 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CG2H40025 General Description

The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CG2H40025 Datasheet (1.24 MB)

Preview of CG2H40025 PDF

Datasheet Details

Part number:

CG2H40025

Manufacturer:

MACOM

File Size:

1.24 MB

Description:

Rf power gan hemt.

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TAGS

CG2H40025 Power GaN HEMT MACOM

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