CG2H40025 Datasheet, Hemt, MACOM

CG2H40025 Features

• Hemt
• Up to 6 GHz Operation
• 17 dB Small Signal Gain at 2.0 GHz
• 15 dB Small Signal Gain at 4.0 GHz
• 30 W typical PSAT
• 70% Efficiency at PSAT

PDF File Details

Part number:

CG2H40025

Manufacturer:

MACOM

File Size:

1.24MB

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📄 Datasheet

Description:

Rf power gan hemt. The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 vol

CG2H40025 Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplif

TAGS

CG2H40025

MACOM

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