MSP0515D Datasheet, mosfet equivalent, MORESEMI

MSP0515D Features

• Mosfet
• VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Excell

PDF File Details

Part number:

MSP0515D

Manufacturer:

MORESEMI

File Size:

389.96kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet.

TAGS

MSP0515D

MORESEMI

📁 Related Datasheet

MSP05120V1 - Silicon Carbide Diode (Maple Semiconductor)
MSP05120V1 MSP05120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.

MSP0505W - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0505W -55V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design.

MSP0203 - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0203 -20V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-.

MSP0204 - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0204 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-.

MSP0204E - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0204E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.

MSP0205 - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0205 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.

MSP0205A - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0205A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=.

MSP02120V1 - Silicon Carbide Diode (Maple Semiconductor)
MSP02120V1 MSP02120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.

MSP0304 - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0304 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS.

MSP0305W - P-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSP0305W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VG.