Datasheet Specifications
- Part number
- MT82P50N3
- Manufacturer
- MT Semiconductor
- File Size
- 433.85 KB
- Datasheet
- MT82P50N3-MTSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
MT82P50N3 3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary V DS= -20V ID = -50A RDS(ON) = 5.5m @VGS= -10V RDS(.
Features
* Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. $SSOLFDWLRQV Notebook Computer Portable Battery Pack Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Voltage GateApplications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informatMT82P50N3 Distributors
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