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MT82P03N3 Datasheet - MT Semiconductor

MT82P03N3, P-Channel MOSFET

 MT82P03N3  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -20V ‡ ID= -40A ‡ RDS(ON) 9 m ‡ RDS(ON) 13 m @VGS.
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MT82P03N3-MTSemiconductor.pdf

Preview of MT82P03N3 PDF

Datasheet Details

Part number:

MT82P03N3

Manufacturer:

MT Semiconductor

File Size:

388.66 KB

Description:

P-Channel MOSFET

Features

* Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Vo

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures requi

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