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MT82P03N3 - P-Channel MOSFET

MT82P03N3 Description

 MT82P03N3  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -20V ‡ ID= -40A ‡ RDS(ON) 9 m ‡ RDS(ON) 13 m @VGS.

MT82P03N3 Features

* Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Vo

MT82P03N3 Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures requi

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Datasheet Details

Part number
MT82P03N3
Manufacturer
MT Semiconductor
File Size
388.66 KB
Datasheet
MT82P03N3-MTSemiconductor.pdf
Description
P-Channel MOSFET

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MT Semiconductor MT82P03N3-like datasheet