Datasheet Specifications
- Part number
- MT82P03N3
- Manufacturer
- MT Semiconductor
- File Size
- 388.66 KB
- Datasheet
- MT82P03N3-MTSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
MT82P03N3 3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = -20V ID= -40A RDS(ON) 9 m RDS(ON) 13 m @VGS.
Features
* Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. $SSOLFDWLRQV Notebook Computer Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source VoApplications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures requiMT82P03N3 Distributors
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