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MX29F100B - 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

This page provides the datasheet information for the MX29F100B, a member of the MX29F100T 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY family.

Datasheet Summary

Description

The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP.

Features

  • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatical.

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Datasheet preview – MX29F100B

Datasheet Details

Part number MX29F100B
Manufacturer Macronix International
File Size 702.68 KB
Description 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
Datasheet download datasheet MX29F100B Datasheet
Additional preview pages of the MX29F100B datasheet.

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Other Datasheets by Macronix International
  • MX29F100T - 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
  • MX29F1610A - 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
  • MX29F1611 - 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
  • MX29F1615 - 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
  • MX29F040 - 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
  • MX29F040C - 4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
  • MX29F200B - 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
  • MX29F200CB - 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

Full PDF Text Transcription

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MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion.
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