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MX29F1611 - 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

Datasheet Summary

Description

The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8.

The MX29F1611 includes 16-128KB(131,072 Bytes) blocks or 16-64KW(65,536 Words)blocks.

Features

  • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2.
  • Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 150ms typical.
  • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip w.

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Datasheet Details

Part number MX29F1611
Manufacturer Macronix International
File Size 166.66 KB
Description 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Datasheet download datasheet MX29F1611 Datasheet
Additional preview pages of the MX29F1611 datasheet.

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Full PDF Text Transcription

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INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2 • Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 150ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses • Status Register feature for detection of program or erase cycle completion • Low VCC write inhibit is equal to or less than 3.
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