MDS5601 Datasheet, Mosfet, MagnaChip

MDS5601 Features

  • Mosfet à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximu

PDF File Details

Part number:

MDS5601

Manufacturer:

MagnaChip

File Size:

669.23kb

Download:

📄 Datasheet

Description:

Dual n-channel trench mosfet. The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching perfo

Datasheet Preview: MDS5601 📥 Download PDF (669.23kb)
Page 2 of MDS5601 Page 3 of MDS5601

MDS5601 Application

  • Applications Features à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8

TAGS

MDS5601
Dual
N-Channel
Trench
MOSFET
MagnaChip

📁 Related Datasheet

MDS5651 - Dual N-Channel Trench MOSFET (MagnaChip)
MDS5651– Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ MDS5651 Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ General Description The MDS5651 uses adva.

MDS5652 - Dual N-Channel Trench MOSFET (MagnaChip)
MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ General Description The MDS5652 uses a.

MDS50 - DIODE / SCR MODULE (ST Microelectronics)
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION.

MDS50 - Three Phase Bridge Rectifier (Naina Semiconductor)
Naina Semiconductor Ltd. MDS50 Three Phase Bridge Rectifier, 50 Amps Features • Easy connections • Excellent power volume ratio • Insulated type Vo.

MDS50-1200 - DIODE / SCR MODULE (ST Microelectronics)
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION.

MDS50-800 - DIODE / SCR MODULE (ST Microelectronics)
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION.

MDS500 - Three Phase Rectifier Bridge (YZPST)
.

MDS500L - new pulsed power transistor designed to provide 500 watts output power (Micrel Semiconductor)
.. MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 MHz PRELIMINARY GENERAL DESCRIPTION The MDS500L is a high power COMMON BASE bip.

MDS5951 - Dual N-Channel Trench MOSFET (Magna Chip)
..net MDS5951– Dual N-Channel Trench MOSFET MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50mΩ General Description The MDS5951 uses .

MDS-148 - Double-Balanced Mixer (MA-COM)
MD- / MDS-148 Double-Balanced Mixer, 10 - 1500 MHz Features n Fully Hermetic Package n 1 dB Compression Point: +5 dBm n Conversion Loss: 6 dB Typical.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts