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MDS5601 - Dual N-Channel Trench MOSFET

MDS5601 Description

MDS5601 * Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ General .
The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

MDS5601 Features

* à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pul

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Datasheet Details

Part number
MDS5601
Manufacturer
MagnaChip
File Size
669.23 KB
Datasheet
MDS5601-MagnaChip.pdf
Description
Dual N-Channel Trench MOSFET

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Dual N-Channel Trench MOSFET MagnaChip
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