MDV5524 Dual N-Channel Trench MOSFET

MagnaChip

Description

MDV5524 * Asymmetric Dual N-Channel Trench MOSFET 30V MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V General .
The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

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Datasheet Specifications

Part number: MDV5524
Manufacturer: MagnaChip
File Size: 1.51 MB
Datasheet: MDV5524-MagnaChip.pdf
Description: Dual N-Channel Trench MOSFET

Features

* FET1 FET2  VDS = 30V  ID = 24.5A VDS = 30V ID = 31.2A @VGS = 10V  RDS(ON) < 14.4mΩ < 21.3mΩ < 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 D1 D14D13D12G11 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source V

MDV5524 Distributors

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MDV5524 Dual N-Channel Trench MOSFET MagnaChip

MagnaChip MDV5524-like datasheet