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SLD50R550SJ Datasheet - Maple Semiconductor

SLD50R550SJ, N-Channel MOSFET

SLD50R550SJ/SLU50R550SJ SLD50R550SJ/SLU50R550SJ 500V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.
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SLD50R550SJ-MapleSemiconductor.pdf

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Datasheet Details

Part number:

SLD50R550SJ

Manufacturer:

Maple Semiconductor

File Size:

632.79 KB

Description:

N-Channel MOSFET

Features

* - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550S

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