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SLD5N65S

N-Channel MOSFET

SLD5N65S Features

* - 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD5N65S / SLU5N65S VDSS

SLD5N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD5N65S Datasheet (464.47 KB)

Preview of SLD5N65S PDF

Datasheet Details

Part number:

SLD5N65S

Manufacturer:

Maple Semiconductor

File Size:

464.47 KB

Description:

N-channel mosfet.

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SLD5N65S N-Channel MOSFET Maple Semiconductor

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