SLD5N50S Datasheet - Maple Semiconductor

SLD5N50S N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD5N50S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-252 TO-251 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLU5N50S SLD5N50S VD

SLD5N50S-MapleSemiconductor.pdf