Part number:
SLD5N50S
Manufacturer:
Maple Semiconductor
File Size:
0.96 MB
Description:
N-channel mosfet.
* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-252 TO-251 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLU5N50S SLD5N50S VD
SLD5N50S
Maple Semiconductor
0.96 MB
N-channel mosfet.
📁 Related Datasheet
SLD5N60C - N-Channel MOSFET
(Maple Semiconductor)
SLD5N60C / SLU5N60C
SLD5N60C / SLU5N60C
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced planar s.
SLD5N65S - N-Channel MOSFET
(Maple Semiconductor)
SLD5N65S / SLU5N65S
SLD5N65S / SLU5N65S
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced planar s.
SLD5N65SV - 650V N-Channel MOSFE
(Synmosaic)
sales.Mr.wang13826508770 .sztssd.
SLU5N65SV / SLD5N65SV
SLU5N65SV / SLD5N65SV
650V N-Channel MOSFET
General Description
Features
This Power.
SLD50R290SJ - N-Channel MOSFET
(Maple Semiconductor)
SLB/D/F/I/P /U50R290SJ
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology.
SLD50R550SJ - N-Channel MOSFET
(Maple Semiconductor)
SLD50R550SJ/SLU50R550SJ
SLD50R550SJ/SLU50R550SJ
500V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s A.
SLD51-018 - TVS Diodes
(Littelfuse)
SLD Series
Axial Leaded - 2200W
TVS Diodes Datasheet
Uni-directional
RoHS
Pb e3
Description
The AEC-Q101 qualified SLD Series is packaged in a hi.
SLD51U-017 - TVS Diodes
(Littelfuse)
SLD Series
Axial Leaded - 2200W
TVS Diodes Datasheet
Uni-directional
RoHS
Pb e3
Description
The AEC-Q101 qualified SLD Series is packaged in a hi.
SLD54-018 - TVS Diodes
(Littelfuse)
SLD Series
Axial Leaded - 2200W
TVS Diodes Datasheet
Uni-directional
RoHS
Pb e3
Description
The AEC-Q101 qualified SLD Series is packaged in a hi.
