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SLP11N35UZ

N-Channel MOSFET

SLP11N35UZ Features

* - 11A, 350V, RDS(on)typ. = 0.460Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

SLP11N35UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP11N35UZ Datasheet (319.70 KB)

Preview of SLP11N35UZ PDF

Datasheet Details

Part number:

SLP11N35UZ

Manufacturer:

Maple Semiconductor

File Size:

319.70 KB

Description:

N-channel mosfet.

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TAGS

SLP11N35UZ N-Channel MOSFET Maple Semiconductor

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