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SLP11N35UZ N-Channel MOSFET

SLP11N35UZ Description

SLP11N35UZ / SLF11N35UZ SLP11N35UZ / SLF11N35UZ 350V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLP11N35UZ Features

* - 11A, 350V, RDS(on)typ. = 0.460Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

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N-Channel MOSFET Maple Semiconductor
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